Synthesis of GaN by N ion implantation in GaAs (001)
dc.contributor.author | Lin, X.W. | pt_BR |
dc.contributor.author | Behar, Moni | pt_BR |
dc.contributor.author | Maltez, Rogério Luis | pt_BR |
dc.contributor.author | Swider, W. | pt_BR |
dc.contributor.author | Liliental-Weber, Zuzanna | pt_BR |
dc.contributor.author | Washburn, J. | pt_BR |
dc.date.accessioned | 2016-05-10T02:06:57Z | pt_BR |
dc.date.issued | 1995 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/140579 | pt_BR |
dc.description.abstract | Both the hexagonal and cubic GaN phases were synthesized in GaAs ~001! by 50 keV N ion implantation at 380 °C and subsequent furnace annealing at 850–950 °C for 10 min–2 h. For a fluence of 1.531017 cm22, transmission electron microscopy revealed that cubic GaN epitaxially crystallizes as precipitates in the GaAs matrix. A cubic-to-hexagonal GaN phase transition was observed for extended thermal anneals. By increasing the N fluence to 331017 cm22, a continuous buried layer of randomly oriented hexagonal-GaN nanocrystals was produced. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 67, no. 18 (Oct. 1995), p. 2699-2701 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Microscopia ionica | pt_BR |
dc.subject | Crescimento epitaxial | pt_BR |
dc.subject | Sputtering | pt_BR |
dc.subject | Deposição de vapor químico | pt_BR |
dc.subject | Arseneto de galio | pt_BR |
dc.title | Synthesis of GaN by N ion implantation in GaAs (001) | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000036969 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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