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Low-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Si

dc.contributor.authorLin, X.W.pt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorDesimoni, Judithpt_BR
dc.contributor.authorBernas, H.pt_BR
dc.contributor.authorWashburn, J.pt_BR
dc.contributor.authorLiliental-Weber, Zuzannapt_BR
dc.date.accessioned2016-05-10T02:06:50Zpt_BR
dc.date.issued1993pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/140557pt_BR
dc.description.abstractIon-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Both cubic FeSi, and a-FeSi, were formed in epitaxy with the Si matrix with two types of orientations (fully aligned and twinned). The twins of a-FeSi, and those of cubic FeSi, were found to have exactly the same type of epitaxial relationship as for the aligned ones. The thermodynamically stable /3-FeS& is not formed, demonstrating that ion-beam-induced crystallization can lead to preferential phase formation as well as to epitaxy.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 63, no. 1 (July 1993), p. 105-107pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectEspectrometriapt_BR
dc.titleLow-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Sipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000056702pt_BR
dc.type.originEstrangeiropt_BR


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