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Low-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Si
dc.contributor.author | Lin, X.W. | pt_BR |
dc.contributor.author | Behar, Moni | pt_BR |
dc.contributor.author | Desimoni, Judith | pt_BR |
dc.contributor.author | Bernas, H. | pt_BR |
dc.contributor.author | Washburn, J. | pt_BR |
dc.contributor.author | Liliental-Weber, Zuzanna | pt_BR |
dc.date.accessioned | 2016-05-10T02:06:50Z | pt_BR |
dc.date.issued | 1993 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/140557 | pt_BR |
dc.description.abstract | Ion-beam-induced epitaxial crystallization of amorphous Si implanted with Fe to 18 at. % peak concentration was studied. The structure of the specimen was characterized using transmission electron microscopy and Rutherford backscattering spectrometry. Both cubic FeSi, and a-FeSi, were formed in epitaxy with the Si matrix with two types of orientations (fully aligned and twinned). The twins of a-FeSi, and those of cubic FeSi, were found to have exactly the same type of epitaxial relationship as for the aligned ones. The thermodynamically stable /3-FeS& is not formed, demonstrating that ion-beam-induced crystallization can lead to preferential phase formation as well as to epitaxy. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 63, no. 1 (July 1993), p. 105-107 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Física da matéria condensada | pt_BR |
dc.subject | Retroespalhamento rutherford | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Espectrometria | pt_BR |
dc.title | Low-temperature ion-induced epitaxial growth of alfa-FeSi2 and cubic FeSi2 in Si | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000056702 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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