The effects of ion implantation through very thin silicon oxide films

dc.contributor.author	Baumvol, Israel Jacob Rabin	pt_BR
dc.contributor.author	Stedile, Fernanda Chiarello	pt_BR
dc.contributor.author	Rigo, Serge	pt_BR
dc.contributor.author	Ganem, Jean-Jacques	pt_BR
dc.contributor.author	Trimaille, Isabelle	pt_BR
dc.date.accessioned	2015-06-30T02:00:58Z	pt_BR
dc.date.issued	1994	pt_BR
dc.identifier.issn	0103-9733	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/118261	pt_BR
dc.description.abstract	The ion implantation of heavy dopant species through very thin silicon oxide gate insulators degrades the insulating properties of the oxide inducing an enhanced leakage current in MOS siructures as well as a decrease of the dielectric breakdown voltage. In the present work we study quantitatively the possible physico-chemical causes of these degradation phenomena and of their recovery by thermal annealing using 18 O isotopic tracing techniques.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Brazilian Journal of Physics. São Paulo. Vol. 24, no. 2 (June 1994), p. 529-537	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Implantação de íons	pt_BR
dc.subject	Filmes finos	pt_BR
dc.subject	Implantacao ionica	pt_BR
dc.title	The effects of ion implantation through very thin silicon oxide films	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000220162	pt_BR
dc.type.origin	Nacional	pt_BR

Este item está licenciado na Creative Commons License