The post-annealing environment effect on the photoluminescence recovery of ion-irradiated Si nanocrystals

dc.contributor.author	Sias, Uilson Schwantz	pt_BR
dc.contributor.author	Behar, Moni	pt_BR
dc.contributor.author	Boudinov, Henri Ivanov	pt_BR
dc.contributor.author	Moreira, Eduardo Ceretta	pt_BR
dc.date.accessioned	2007-08-25T05:12:11Z	pt_BR
dc.date.issued	2007	pt_BR
dc.identifier.issn	0168-583X	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/10530	pt_BR
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms. Amsterdam. Vol. 257, no. 1/2 (Apr. 2007), p. 6-10	pt_BR
dc.rights	Open Access	en
dc.subject	Implantação de íons	pt_BR
dc.subject	Polímeros	pt_BR
dc.subject	Radiacao ionica	pt_BR
dc.subject	Nanocristais	pt_BR
dc.subject	Silício	pt_BR
dc.title	The post-annealing environment effect on the photoluminescence recovery of ion-irradiated Si nanocrystals	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000595818	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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