Latent ion tracks in amorphous silicon
dc.contributor.author | Bierschenk, Thomas | pt_BR |
dc.contributor.author | Giulian, Raquel | pt_BR |
dc.contributor.author | Afra, Boshra | pt_BR |
dc.contributor.author | Rodriguez, M. D. | pt_BR |
dc.contributor.author | Schauries, Daniel | pt_BR |
dc.contributor.author | Mudie, Stephen | pt_BR |
dc.contributor.author | Pakarinen, O. H. | pt_BR |
dc.contributor.author | Djurabekova, F. | pt_BR |
dc.contributor.author | Nordlund, K. | pt_BR |
dc.contributor.author | Osmani, O. | pt_BR |
dc.contributor.author | Medvedev, N. | pt_BR |
dc.contributor.author | Rethfeld, B. | pt_BR |
dc.contributor.author | Ridgway, M.C. | pt_BR |
dc.contributor.author | Kluth, Patrick | pt_BR |
dc.date.accessioned | 2014-10-15T02:12:42Z | pt_BR |
dc.date.issued | 2013 | pt_BR |
dc.identifier.issn | 1098-0121 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/104567 | pt_BR |
dc.description.abstract | We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to differentmicrostructures andmelting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 88, no. 17 (Nov. 2013), 174111, 5 p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Dinâmica molecular | pt_BR |
dc.subject | Efeitos de radiação | pt_BR |
dc.subject | Microestrutura cristalina | pt_BR |
dc.subject | Semicondutores amorfos | pt_BR |
dc.subject | Semicondutores elementares | pt_BR |
dc.subject | Silício | pt_BR |
dc.title | Latent ion tracks in amorphous silicon | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000906992 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
Este item está licenciado na Creative Commons License
-
Artigos de Periódicos (39074)Ciências Exatas e da Terra (5943)