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Low potential barrier height effects in magnetic tunneling junctions

dc.contributor.authorCruz de Gracia, Evgeni Svenkpt_BR
dc.contributor.authorDorneles, Lucio Strazzaboscopt_BR
dc.contributor.authorSchelp, Luiz Fernandopt_BR
dc.contributor.authorTeixeira, Sergio Ribeiropt_BR
dc.contributor.authorBaibich, Mario Norbertopt_BR
dc.date.accessioned2014-10-14T02:13:00Zpt_BR
dc.date.issued2007pt_BR
dc.identifier.issn1098-0121pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/104513pt_BR
dc.description.abstractThis paper reports on the study of deposited (Ni81Fe19/AlOx /Co) magnetic tunnel junctions by magnetron sputtering, with the insulating layer obtained by plasma oxidation of Al. Concentration of the tunnel current in small areas of the junctions and low potential barrier heights were identified by fitting, for each individual sample, the room temperature I-V curves with either Simmons’ [J. Appl. Phys. 34, 1793 1963 ; 35, 2655 (1964) ; 34, 2581 (1963)] or Chow’s [J. Appl. Phys. 36, 559 (1965)] model. A fast decrease of the tunnel magnetoresistance as a function of the bias voltage is observed, with an inversion of its signal above a critical value. The results are discussed in terms of the quantum coherence factor for low height insulating barriers.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter and materials physics. Woodbury. Vol. 76, no. 21 (Dec. 2007), 214426 7p.pt_BR
dc.rightsOpen Accessen
dc.subjectMagnetorresistênciapt_BR
dc.subjectPropriedades magnéticaspt_BR
dc.subjectJunçõespt_BR
dc.titleLow potential barrier height effects in magnetic tunneling junctionspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000624132pt_BR
dc.type.originEstrangeiropt_BR


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