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Impurity resistivity of the double-donor system Si:P,Bi
dc.contributor.author | Silva, Antonio Ferreira da | pt_BR |
dc.contributor.author | Sernelius, Bo E. | pt_BR |
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.contributor.author | Zheng, Hairong | pt_BR |
dc.contributor.author | Sarachik, M.P. | pt_BR |
dc.date.accessioned | 2014-10-08T02:11:03Z | pt_BR |
dc.date.issued | 1999 | pt_BR |
dc.identifier.issn | 1098-0121 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/104254 | pt_BR |
dc.description.abstract | The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Physical review. B, Condensed matter and materials physics. Melville. Vol. 60, no. 23 (Dec. 1999), p. 15824-15828 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Impurezas | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.subject | Temperatura | pt_BR |
dc.subject | Condutividade elétrica | pt_BR |
dc.subject | Dopagem de semicondutores | pt_BR |
dc.subject | Retroespalhamento rutherford | pt_BR |
dc.subject | Semicondutores | pt_BR |
dc.subject | Transição metal isolante | pt_BR |
dc.subject | Boro | pt_BR |
dc.subject | Fósforo | pt_BR |
dc.subject | Silício | pt_BR |
dc.title | Impurity resistivity of the double-donor system Si:P,Bi | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000269719 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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