Angular dependence of the electronic energy loss of 800-keV He ions along the Si<100> direction

dc.contributor.author	Santos, Jose Henrique Rodrigues dos	pt_BR
dc.contributor.author	Grande, Pedro Luis	pt_BR
dc.contributor.author	Behar, Moni	pt_BR
dc.contributor.author	Boudinov, Henri Ivanov	pt_BR
dc.contributor.author	Schiwietz, Gregor	pt_BR
dc.date.accessioned	2014-10-07T02:11:24Z	pt_BR
dc.date.issued	1997	pt_BR
dc.identifier.issn	0163-1829	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/104224	pt_BR
dc.description.abstract	We present measurements of the stopping power of 800-keV 4He ions channeled along the Si(100) axis, as a function of the incidence angle. We compare the experimental results with theoretical calculations by using the impact-parameter-dependent energy loss obtained from the solution of the time-dependent Schro¨dinger equation through the coupled-channel method. This nonperturbative calculation provides reliable energy-loss results which are in good agreement with the experimental results.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Physical review. B, Condensed matter. New York. Vol. 55, no. 7 (Feb. 1997), p. 4332-4342	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Hélio	pt_BR
dc.subject	Retroespalhamento rutherford	pt_BR
dc.title	Angular dependence of the electronic energy loss of 800-keV He ions along the Si<100> direction	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000192473	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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