Electronic energy loss of channeled ions : the giant Barkas effect
Fecha
2004Autor
Materia
Abstract
In this work we have measured the electronic energy loss of ⁹Be and ¹¹B ions for the ‹100› and ‹110› directions in Si as a function of the incident ion energy. The channeling measurements cover a wide energy range between 100 keV/amu and 1 MeV/amu. The Rutherford backscattering technique has been employed in the present experiments. An overall compilation of channeling energy loss values for several ions, including those for He, Li, and O measured previously, provides a clear picture of the Bar ...
In this work we have measured the electronic energy loss of ⁹Be and ¹¹B ions for the ‹100› and ‹110› directions in Si as a function of the incident ion energy. The channeling measurements cover a wide energy range between 100 keV/amu and 1 MeV/amu. The Rutherford backscattering technique has been employed in the present experiments. An overall compilation of channeling energy loss values for several ions, including those for He, Li, and O measured previously, provides a clear picture of the Barkas contribution to the stopping power due to valence electrons in the present energy regime. A maximum of the relative contribution occurs for Be ions around 250 keV/amu while a saturation effect is observed for heavier ions. These results are interpreted in terms of a self-consistent nonlinear calculation based on the transport cross-section approach together with the unitary convolution approximation model, which describe the present data reasonably well at high projectile energies. ...
En
Physical review. A, Atomic, molecular, and optical physics. New York. Vol. 70, no. 3 (Sept. 2004), 032903, 8p.
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