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Reaction-diffusion model for thermal growth of silicon nitride films on Si
dc.contributor.author | Almeida, Rita Maria Cunha de | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.date.accessioned | 2014-09-26T02:10:47Z | pt_BR |
dc.date.issued | 2000 | pt_BR |
dc.identifier.issn | 1098-0121 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/103841 | pt_BR |
dc.description.abstract | Thermal growth of ultrathin silicon nitride films on Si in NH₃ is modeled as a dynamic system governed by reaction-diffusion equations. Solution of the model yields profiles of the involved species consistent with experimental observations of a stoichiometric silicon nitride layer in the near-surface region and a subnitride layer of comparable thickness in the near-interface region. Self-limited growth kinetics are also obtained from the model equations in good agreement with experimental results, owing to a diffusion barrier layer to the nitridant species formed in the near-surface region by stoichiometric silicon nitride. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Physical review. B, Condensed matter and materials physics. Woodbury. Vol. 62, no. 24 (Dec. 2000), p. R16255-R16258 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Filmes finos isolantes | pt_BR |
dc.subject | Nitretação | pt_BR |
dc.subject | Interfaces semicondutor-isolante | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Compostos de silício | pt_BR |
dc.subject | Estequiometria | pt_BR |
dc.subject | Química de superfícies | pt_BR |
dc.title | Reaction-diffusion model for thermal growth of silicon nitride films on Si | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000281926 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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