In situ electrical resistivity of thin-film beta-nial under ar irradiation at 77 k

dc.contributor.author	Costa, Jose Antonio Trindade Borges da	pt_BR
dc.contributor.author	Vasconcellos, Marcos Antonio Zen	pt_BR
dc.contributor.author	Teixeira, Sergio Ribeiro	pt_BR
dc.contributor.author	Scherer, Claudio	pt_BR
dc.contributor.author	Baibich, Mario Norberto	pt_BR
dc.date.accessioned	2014-09-23T02:12:23Z	pt_BR
dc.date.issued	1992	pt_BR
dc.identifier.issn	0163-1829	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/103619	pt_BR
dc.description.abstract	We report on the dose dependence of the in sítu electrical resistivity of a thin-film NiAl alloy under 120-keV-Ar-ion irradiation at 77 K. The results show two different behaviors. First, the values of resistivity increase, exhibiting a maximum, and then, for higher doses, the electrical resistivity decreases down to saturation. Our results are interpreted in terms of simple composite models that assume local transformation of the solid by successive ion impacts.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Physical review. B, Condensed matter. New York. Vol. 45, no. 17 (May 1992), p. 9626-9628	pt_BR
dc.rights	Open Access	en
dc.subject	Implantacao ionica	pt_BR
dc.subject	Filmes finos	pt_BR
dc.subject	Condutividade	pt_BR
dc.subject	Radiacao ionica	pt_BR
dc.subject	Intermetalicos	pt_BR
dc.subject	Mistura por bombardeamento ionico	pt_BR
dc.title	In situ electrical resistivity of thin-film beta-nial under ar irradiation at 77 k	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000055738	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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