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dc.contributor.authorCosta, Jose Antonio Trindade Borges dapt_BR
dc.contributor.authorVasconcellos, Marcos Antonio Zenpt_BR
dc.contributor.authorTeixeira, Sergio Ribeiropt_BR
dc.contributor.authorScherer, Claudiopt_BR
dc.contributor.authorBaibich, Mario Norbertopt_BR
dc.date.accessioned2014-09-23T02:12:23Zpt_BR
dc.date.issued1992pt_BR
dc.identifier.issn0163-1829pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/103619pt_BR
dc.description.abstractWe report on the dose dependence of the in sítu electrical resistivity of a thin-film NiAl alloy under 120-keV-Ar-ion irradiation at 77 K. The results show two different behaviors. First, the values of resistivity increase, exhibiting a maximum, and then, for higher doses, the electrical resistivity decreases down to saturation. Our results are interpreted in terms of simple composite models that assume local transformation of the solid by successive ion impacts.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter. New York. Vol. 45, no. 17 (May 1992), p. 9626-9628pt_BR
dc.rightsOpen Accessen
dc.subjectImplantacao ionicapt_BR
dc.subjectFilmes finospt_BR
dc.subjectCondutividadept_BR
dc.subjectRadiacao ionicapt_BR
dc.subjectIntermetalicospt_BR
dc.subjectMistura por bombardeamento ionicopt_BR
dc.titleIn situ electrical resistivity of thin-film beta-nial under ar irradiation at 77 kpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000055738pt_BR
dc.type.originEstrangeiropt_BR


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