Range and thermal behavior studies of Au and Bi implanted into photoresist films

Abstract

The Rutherford backscattering technique has been used to determine range parameters of Au and Bi íons implanted into AZ1350 photoresist films at energies from 20 to 300 keV. The experimental results are 20 to 25% higher than the theoretical predictions by Ziegler, Biersack, and Littmark. Good agreement is achieved only when inelastic etrects are included in the nuclear stopping-power regime. In addition, we find that shallow implantation of Bi íons increases the temperature at which the photoresist starts to decompose. This feature is not observed when Au is implanted under the same conditions. Finally, we have studied the thermal behavior of implanted Bi and Au ions. While Bi diffuses regularly, Au does not follow an Arrhenius kind of behavior. In addition, it is shown that the implantation process modifies, via the nonannealed damage, the characteristics of the Bi diffusion behavior.