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dc.contributor.authorRidgway, M.C.pt_BR
dc.contributor.authorBierschenk, Thomaspt_BR
dc.contributor.authorGiulian, Raquelpt_BR
dc.contributor.authorAfra, Boshrapt_BR
dc.contributor.authorRodriguez, M. D.pt_BR
dc.contributor.authorAraújo, Leandro Langiept_BR
dc.contributor.authorByrne, A. P.pt_BR
dc.contributor.authorKirby, Nigelpt_BR
dc.contributor.authorPakarinen, O. H.pt_BR
dc.contributor.authorDjurabekova, F.pt_BR
dc.contributor.authorNordlund, K.pt_BR
dc.contributor.authorSchleberger, M.pt_BR
dc.contributor.authorOsmani, O.pt_BR
dc.contributor.authorMedvedev, N.pt_BR
dc.contributor.authorRethfeld, B.pt_BR
dc.contributor.authorKluth, Patrickpt_BR
dc.date.accessioned2014-08-19T02:10:34Zpt_BR
dc.date.issued2013pt_BR
dc.identifier.issn0031-9007pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/101366pt_BR
dc.description.abstractIon tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review letters. New York. Vol. 110, no. 24 (June 2013), 245502, 5 p.pt_BR
dc.rightsOpen Accessen
dc.subjectSemicondutores amorfospt_BR
dc.subjectSemicondutores elementarespt_BR
dc.subjectSolidificaçãopt_BR
dc.subjectEfeitos de feixe iônicopt_BR
dc.subjectGermâniopt_BR
dc.titleTracks and voids in amorphous Ge induced by swift heavy-ion irradiationpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000897306pt_BR
dc.type.originEstrangeiropt_BR


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