Navegação por Assunto "Interfaces semicondutor-isolante"

Resultados 1-4 de 4

    • Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures 

      McDonald, K.; Huang, M.B.; Weller, R.A.; Feldman, L.C.; Williams, J.R.; Stedile, Fernanda Chiarello; Baumvol, Israel Jacob Rabin; Radtke, Claudio (2000) [Artigo de periódico]
      The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ...

    • Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si 

      Miotti, Leonardo; Bastos, Karen Paz; Driemeier, Carlos Eduardo; Edon, Vincent; Hugon, Marie-Christine; Agius, Bernard; Baumvol, Israel Jacob Rabin (2005) [Artigo de periódico]
      LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. ...

    • Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide 

      Palmieri, Rodrigo; Radtke, Claudio; Boudinov, Henri Ivanov; Silva Júnior, Eronides Felisberto da (2009) [Artigo de periódico]
      The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density ...

    • Reaction-diffusion model for thermal growth of silicon nitride films on Si 

      Almeida, Rita Maria Cunha de; Baumvol, Israel Jacob Rabin (2000) [Artigo de periódico]
      Thermal growth of ultrathin silicon nitride films on Si in NH₃ is modeled as a dynamic system governed by reaction-diffusion equations. Solution of the model yields profiles of the involved species consistent with experimental ...