Navegação por Assunto "Crescimento epitaxial na fase de vapor"
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Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles : bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions
(2010) [Artigo de periódico]We investigated the optical absorption of the fundamental band edge and the origin of the emission from β-FeSi2 nanoparticles synthesized by ion-beam-induced epitaxial crystallization of Fe+ implanted SiO2 / Si 100 followed ...