Navegação por Autor "Tseng, Hsing-Huang"
Resultados 1-2 de 2
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Improved Ge surface passivation with ultrathin SiO/sub x/ enabling high-mobility surface channel pMOSFETs featuring a HfSiO/WN gate stack
Joshi, Sachin; Krug, Cristiano; Heh, Dawei; Na, Hoon Joo; Harris, Harlan R.; Oh, Jung Woo; Kirsch, Paul D.; Majhi, Prashant; Lee, Byoung Hun; Tseng, Hsing-Huang; Jammy, Raj; Lee, Jack C.; Banerjee, Sanjay K. (2007) [Artigo de periódico]To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial ... -
Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/
Bastos, Karen Paz; Morais, Jonder; Miotti, Leonardo; Pezzi, Rafael Peretti; Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Hegde, R.I.; Tseng, Hsing-Huang; Tobin, Phil J. (2002) [Artigo de periódico]Composition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was ...