Browsing by Author "Trimaille, Isabelle"
Now showing items 1-8 of 8
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Diffusion of near surface defects during the thermal oxidation of silicon
(1997) [Journal article]The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigated using sequential treatments in natural oxygen (16O2) and in heavy oxygen (18O2) in a Joule effect furnace. The 18O depth ... -
Dry oxidation mechanisms of thin dielectric films formed under n/sub 2/o using isotopic tracing methods
(1996) [Journal article]We investigated the mechanisms of thermal reoxidation in dry O2 of silicon oxynitride films prepared by processing Si~100! wafers in a rapid thermal furnace in a pure nitrous oxide ~N2O! ambient, using isotopic tracing of ... -
Incorporation of oxygen and nitrogen in ultrathin films of SiO/sub 2 annealed in NO
(1998) [Journal article]The areal densities of oxygen and nitrogen incorporated into ultrathin films of silicon dioxide during rapid thermal processing in nitric oxide, as well as the regions where these incorporations took place, were determined ... -
Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in O2, NH3, and N2O
(1997) [Journal article]We performed isotopic tracing of O, N, and H during rapid thermal growth of silicon oxynitride films on silicon in two different sequential, synergistic gas environments: O2, followed by NH3, then followed by N2O; and N2O, ... -
Limiting step involved in the thermal growth of silicon oxide films on silicon carbide
(2002) [Journal article]Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the ... -
Nitrogen transport during rapid thermal growth of silicon oxynitride films in N/sub 2/ O
(1996) [Journal article]We investigated the transport of nitrogenous species during rapid thermal growth of silicon oxynitride films on Si in N2O, using N isotopic tracing and high resolution depth profiling techniques. The results indicate that ... -
The effects of ion implantation through very thin silicon oxide films
(1994) [Journal article]The ion implantation of heavy dopant species through very thin silicon oxide gate insulators degrades the insulating properties of the oxide inducing an enhanced leakage current in MOS siructures as well as a decrease of ... -
Thermal growth of silicon oxynitride films on Si : a reaction-diffusion approach
(2004) [Journal article]We present some experimental results and propose a reaction-diffusion model to describe thermal growth of silicon oxynitride films on Si in NO and N2O, as well as annealing in NO of thermally grown silicon oxide films on ...
