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dc.contributor.authorDanilov, Iuript_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorDrozdov, Yu. N.pt_BR
dc.date.accessioned2014-06-06T02:06:21Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/96095pt_BR
dc.description.abstractA study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2 /bulk Si, and (iii) SiO2 /bulk Si. The samples were implanted at 250°C with a dose of 5x1016 cm-² at an energy of 185 keV. By this approach, the damage depth profile distributes along the SiO2 and Si layers in a different manner according to the sample structure. A comparative analysis of the high-resolution x-ray diffraction spectra taken from the implanted samples permitted us to infer on the spatial separation between vacancy and interstitial-rich layers, which are associated with the presence of negative and positive strained layers, respectively.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Vol. 97, no. 7 (Apr. 2005), 076106 3p.pt_BR
dc.rightsOpen Accessen
dc.subjectSemicondutores elementarespt_BR
dc.subjectIntersticiaispt_BR
dc.subjectEfeitos de feixe iônicopt_BR
dc.subjectSiliciopt_BR
dc.subjectCompostos de silíciopt_BR
dc.subjectDifração de raios Xpt_BR
dc.subjectVacancias cristalpt_BR
dc.titleSpatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperaturept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000534083pt_BR
dc.type.originEstrangeiropt_BR


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