Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature
dc.contributor.author | Danilov, Iuri | pt_BR |
dc.contributor.author | Boudinov, Henri Ivanov | pt_BR |
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Drozdov, Yu. N. | pt_BR |
dc.date.accessioned | 2014-06-06T02:06:21Z | pt_BR |
dc.date.issued | 2005 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/96095 | pt_BR |
dc.description.abstract | A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2 /bulk Si, and (iii) SiO2 /bulk Si. The samples were implanted at 250°C with a dose of 5x1016 cm-² at an energy of 185 keV. By this approach, the damage depth profile distributes along the SiO2 and Si layers in a different manner according to the sample structure. A comparative analysis of the high-resolution x-ray diffraction spectra taken from the implanted samples permitted us to infer on the spatial separation between vacancy and interstitial-rich layers, which are associated with the presence of negative and positive strained layers, respectively. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of applied physics. Vol. 97, no. 7 (Apr. 2005), 076106 3p. | pt_BR |
dc.rights | Open Access | en |
dc.subject | Semicondutores elementares | pt_BR |
dc.subject | Intersticiais | pt_BR |
dc.subject | Efeitos de feixe iônico | pt_BR |
dc.subject | Silício | pt_BR |
dc.subject | Compostos de silício | pt_BR |
dc.subject | Difração de raios X | pt_BR |
dc.subject | Vacancias cristal | pt_BR |
dc.title | Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000534083 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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