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dc.contributor.authorKucheyev, Sergei O.pt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorWilliams, J.S.pt_BR
dc.contributor.authorJagadish, Chenupatipt_BR
dc.contributor.authorLi, Gangpt_BR
dc.date.accessioned2014-05-31T02:06:38Zpt_BR
dc.date.issued2002pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95814pt_BR
dc.description.abstractWe study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of electrical isolation in the case of irradiation with 12C ions. This behavior is consistent with significant dynamic annealing occurring in GaN during MeV light-ion bombardment, which suggests a scenario where the centers responsible for electrical isolation are defect clusters or anti-site-related defects. Dynamic annealing causes simple ion-beam-generated Frenkel pairs to annihilate (or cluster) during irradiation at liquid nitrogen temperature and above. These beam-flux and irradiation-temperature effects are not observed during bombardment with lighter 1H ions, which produce very dilute collision cascades. A qualitative model is proposed to explain temperature and flux effects in GaN in the MeV light-ion bombardment regime used for electrical isolation.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Melville. Vol. 91, no. 7 (Apr. 2002), p. 4117-4120pt_BR
dc.rightsOpen Accessen
dc.subjectRecozimentopt_BR
dc.subjectDefeitos anti-sítiopt_BR
dc.subjectCarbonopt_BR
dc.subjectResistência elétricapt_BR
dc.subjectDefeitos de Frenkelpt_BR
dc.subjectCompostos de galiopt_BR
dc.subjectHidrogêniopt_BR
dc.subjectSemicondutores iii-vpt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectCamadas epitaxiais semicondutoraspt_BR
dc.titleEffect of irradiation temperature and ion flux on electrical isolation of GaNpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000317926pt_BR
dc.type.originEstrangeiropt_BR


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