Mostrar registro simples

Sequential phase formation by ion-induced epitaxy in fe-implanted si(001)

dc.contributor.authorLin, X.W.pt_BR
dc.contributor.authorMaltez, Rogério Luispt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorLiliental-Weber, Zuzannapt_BR
dc.contributor.authorWashburn, J.pt_BR
dc.date.accessioned2014-05-20T02:04:48Zpt_BR
dc.date.issued1995pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95401pt_BR
dc.description.abstractIon-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of y-FeSi2, α-FeSi2 and βFeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the y-a and α -β phase transitions were determined as ≈ 11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of Applied Physics. Woodbury. Vol. 78, n. 7 (Oct. 1995), p. 4382-4385pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectFerro : Epitaxiapt_BR
dc.subjectBombardeamento de ionspt_BR
dc.subjectCrescimento epitaxialpt_BR
dc.subjectImplantação de íonspt_BR
dc.titleSequential phase formation by ion-induced epitaxy in fe-implanted si(001)pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000085815pt_BR
dc.type.originEstrangeiropt_BR


Thumbnail
Nome:
000085815.pdf
Tamanho:
652.3Kb
Formato:
PDF
Descrição:
Texto completo (inglês)
Visualizar/abrir
   

Este item está licenciado na Creative Commons License

Mostrar registro simples