Sequential phase formation by ion-induced epitaxy in fe-implanted si(001)
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Date
1995Type
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Abstract
Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of y-FeSi2, α-FeSi2 and βFeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the y-a and α -β phase transitions were determined as ≈ 11 and ...
Ion-beam-induced epitaxial crystallization (IBIEC) of Fe-implanted Si(OO1) was studied by transmission electron microscopy and Rutherford backscattering spectrometry. For sufficiently high Fe doses, it was found that IBIEC at 320 °C results in sequential epitaxy of Fe silicide phases in Si, with a sequence of y-FeSi2, α-FeSi2 and βFeSi2 with increasing Fe concentration along the implantation profile. The critical concentrations for the y-a and α -β phase transitions were determined as ≈ 11 and 21 at. % Fe, respectively. The observed sequential phase formation can be correlated to the degree of lattice mismatch with the Si matrix and the stoichiometry of the silicide phases. ...
In
Journal of Applied Physics. Woodbury. Vol. 78, n. 7 (Oct. 1995), p. 4382-4385
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