Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100)
dc.contributor.author | Soares, Gabriel Vieira | pt_BR |
dc.contributor.author | Feijó, Tais Orestes | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Aguzzoli, Cesar | pt_BR |
dc.contributor.author | Krug, Cristiano | pt_BR |
dc.contributor.author | Radtke, Claudio | pt_BR |
dc.date.accessioned | 2014-04-26T01:53:21Z | pt_BR |
dc.date.issued | 2014 | pt_BR |
dc.identifier.issn | 0003-6951 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/94805 | pt_BR |
dc.description.abstract | In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate interface region (at 300 C) and through the whole HfO2 layer (400–600 C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO2 films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Applied physics letters. New York. Vol. 104, no. 4 (Jan. 2014), p. 042901-1-042901-4 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Propriedades fisico-quimicas | pt_BR |
dc.subject | Óxido de háfnio | pt_BR |
dc.subject | Hidrogênio | pt_BR |
dc.subject | Germânio | pt_BR |
dc.title | Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100) | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000913540 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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