Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures
dc.contributor.author | Corrêa, Silma Alberton | pt_BR |
dc.contributor.author | Soares, Gabriel Vieira | pt_BR |
dc.contributor.author | Tanner, Philip | pt_BR |
dc.contributor.author | Han, Jisheng | pt_BR |
dc.contributor.author | Dimitrijev, Sima | pt_BR |
dc.contributor.author | Stedile, Fernanda Chiarello | pt_BR |
dc.date.accessioned | 2014-02-14T01:52:45Z | pt_BR |
dc.date.issued | 2013 | pt_BR |
dc.identifier.issn | 2162-8769 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/87205 | pt_BR |
dc.description.abstract | The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O 2 , NO, or O 2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed SiO 2 /SiC sample. | en |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | ECS Journal of Solid State Science and Technology. New Jersey. Vol. 2, no. 8 (2013), p. 3041-3044 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Hidrogênio | pt_BR |
dc.subject | Carbeto de silício | pt_BR |
dc.title | Hydrogen incorporation dependence on the thermal growth route in dielectric/SiC structures | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000911661 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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