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dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorNakhaie, Siamakpt_BR
dc.contributor.authorHeilmann, Martinpt_BR
dc.contributor.authorRiechert, Henningpt_BR
dc.contributor.authorLopes, João Marcelo Jordãopt_BR
dc.date.accessioned2020-01-22T04:10:30Zpt_BR
dc.date.issued2018pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/204770pt_BR
dc.description.abstractWe investigated the growth of boron-doped few-layer graphene on a-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron was provided only during the second half of the graphene growth run. Electrical measurements show a higher p-type carrier concentration for samples fabricated utilizing the second approach, with a remarkable modulation in the carrier concentration of almost two orders of magnitude in comparison to the pristine graphene film. The results concerning the influence of the boron flux at different growth stages of graphene on the electrical and physicochemical properties of the films are presented.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 112, no. 16 (Apr. 2018), 163103, 5 p.pt_BR
dc.rightsOpen Accessen
dc.subjectGrafenopt_BR
dc.subjectDopagempt_BR
dc.subjectBoropt_BR
dc.subjectEspectroscopia Ramanpt_BR
dc.subjectEspectroscopia de fotoelétrons excitados por raios Xpt_BR
dc.titleGrowth of boron-doped few-layer graphene by molecular beam epitaxypt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb001075500pt_BR
dc.type.originEstrangeiropt_BR


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