• Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures 

      McDonald, K.; Huang, M.B.; Weller, R.A.; Feldman, L.C.; Williams, J.R.; Stedile, Fernanda Chiarello; Baumvol, Israel Jacob Rabin; Radtke, Claudio (2000) [Artigo de periódico]
      The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ...
    • Effects of post-deposition annealing in O/sub 2/ on the electrical characteristics of LaAlO/sub 3/ films on Si 

      Miotti, Leonardo; Bastos, Karen Paz; Driemeier, Carlos Eduardo; Edon, Vincent; Hugon, Marie-Christine; Agius, Bernard; Baumvol, Israel Jacob Rabin (2005) [Artigo de periódico]
      LaAlO3 films were deposited on p-type Si 100 by sputtering from a LaAlO3 target. C V characteristics were determined in nonannealed and O2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. ...
    • Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si 

      Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Corrêa, Silma Alberton; Radtke, Claudio; Stedile, Fernanda Chiarello (2009) [Artigo de periódico]
      Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO2 films thermally grown on 6H-SiC 0001 and on Si 001 were investigated. Higher incorporation of hydrogen and higher isotopic ...