• Limiting step involved in the thermal growth of silicon oxide films on silicon carbide 

      Vickridge, Ian; Trimaille, Isabelle; Ganem, Jean-Jacques; Rigo, Serge; Radtke, Claudio; Baumvol, Israel Jacob Rabin; Stedile, Fernanda Chiarello (2002) [Artigo de periódico]
      Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the ...