• Formation of epitaxial [Beta]-Sn islands at the interface of SiO/sub 2/Si layers implanted with Sn ions 

      Lopes, João Marcelo Jordão; Zawislak, Fernando Claudio; Fichtner, Paulo Fernando Papaleo; Papaleo, Ricardo Meurer; Lovey, Francisco Carlos; Condó, Adriana M.; Tolley, Alfredo J. (2005) [Artigo de periódico]
      180 nm SiO2 layers on Si s100d were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature s900–1100 °Cd annealing, an array of b-Sn islands ...