Navegação Ciências Exatas e da Terra por Autor "Sadana, Devendra K."
Resultados 1-4 de 4
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Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenide
Sadana, Devendra K.; Souza, Joel Pereira de; Cardone, Franck (1991) [Artigo de periódico]Carrier concentrations at a level of ?Z 1 X 1019 cm - 3 were achieved when Si-capped GaAs underwent rapid thermal oxidation (RTO) in Ar + 0.1% O2 ambient at 850-1000 ‘C for 10-60 s followed by rapid thermal annealing (RTA) ... -
Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantation
Souza, Joel Pereira de; Sadana, Devendra K. (1993) [Artigo de periódico]A pronounced enhancement in the electrical activation of implanted Si in GaAs is demonstrated by co-implantation of Al. The maximum enhancement ( x 2) occurs when the Si distribution is shallow, there is a separation between ... -
Outdiffusion of Be during rapid thermal annealing of high dose be implanted gaas
Souza, Joel Pereira de; Sadana, Devendra K.; Schad, R.G.; Norcott, M.H.; Cardone, Franck; Baratte, H. (1990) [Artigo de periódico]The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or Si02 ) rapid thermal annealing (RTA) at 900-1000 ºC and to depend on the Be dose and its proximity to the surface. ... -
Passivation of n and p dopants in ion-implanted gaas by a 2D+ plasma
Sadana, Devendra K.; Souza, Joel Pereira de; Marshall, E.D.; Baratte, H.; Cardone, Franck (1991) [Artigo de periódico]Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a *D plasma under identical conditions. Even though a discrete band of dislocation loops was present in ...