Navegação Ciências Exatas e da Terra por Autor "Radtke, Claudio"

Resultados 21-29 de 29

    • Oxygen transport and incorporation mechanisms in the dry thermal oxidation of 6H-SiC 

      Radtke, Claudio; Baumvol, Israel Jacob Rabin; Ferrera, Bauer Costa; Stedile, Fernanda Chiarello (2004) [Artigo de periódico]
      Thermal oxidation of 6H-SiC was investigated by means of isotopic tracing and narrow nuclear resonant reaction profiling techniques. The mechanisms of oxygen transport and incorporation were accessed by sequential oxidations ...

    • Ruthenium dioxide nanoparticles in ionic liquids : synthesis, caracterization and catalytic properties in hydrogenation of olefins and arenes 

      Rossi, Liane Marcia; Dupont, Jairton; Machado, Giovanna; Fichtner, Paulo Fernando Papaleo; Radtke, Claudio; Baumvol, Israel Jacob Rabin; Teixeira, Sergio Ribeiro (2004) [Artigo de periódico]
      A reação de NaBH4 com RuCl3 dissolvido no líquido iônico 1-n-butil-3-metilimidazólio hexafluorfosfato (BMI.PF6) é um método simples e reprodutível para a síntese de nanopartículas de RuO2 estáveis com distribuição estreita ...

    • Sequential thermal treatments of SiC in NO and O2 : atomic transport and electrical characteristics 

      Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Hold, L.; Kong, F.; Han, J.; Dimitrijev, Sima; Radtke, Claudio; Stedile, Fernanda Chiarello (2007) [Artigo de periódico]
      Sequential thermal oxidations and oxynitridations of SiC were performed using 18O2 and NO. The resulting films were characterized by x-ray photoelectron spectroscopy, ion beam analyses, and capacitance-voltage measurements. ...

    • Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001) 

      Copetti, Gabriela; Nunes, Eduardo Horbach; Feijó, Tais Orestes; Galves, Lauren Aranha; Heilmann, Martin; Soares, Gabriel Vieira; Lopes, J. M. J.; Radtke, Claudio (2021) [Artigo de periódico]
      As different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently ...

    • Structural characterization of CdSe/ZnS quantum dots using medium energy ion scattering 

      Sortica, Maurício de Albuquerque; Grande, Pedro Luis; Radtke, Claudio; Almeida, Lais Gomes de; Debastiani, Rafaela; Dias, Johnny Ferraz; Hentz, Andre (2012) [Artigo de periódico]
      In the present work, we have analyzed CdSe/ZnS core-shell quantum dots by medium energy ion scattering (MEIS), which is a powerful technique to explore the synthesis, formation, stability, and elemental distribution of ...

    • Thermally-driven H interaction with HfO2 films deposited on Ge(100) and Si(100) 

      Soares, Gabriel Vieira; Feijó, Tais Orestes; Baumvol, Israel Jacob Rabin; Aguzzoli, Cesar; Krug, Cristiano; Radtke, Claudio (2014) [Artigo de periódico]
      In the present work, we investigated the thermally-driven H incorporation in HfO2 films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO2/substrate ...

    • Thermally driven hydrogen interaction with single-layer graphene on SiO2/Si substrates quantified by isotopic labeling 

      Feijó, Tais Orestes; Rolim, Guilherme Koszeniewski; Corrêa, Silma Alberton; Radtke, Claudio; Soares, Gabriel Vieira (2020) [Artigo de periódico]
      In the present work, we investigated the interaction of hydrogen with single-layer graphene. Fully hydrogenated monolayer graphene was predicted to be a semiconductor with a bandgap of 3.5 eV in contrast to the metallic ...

    • Tungsten oxide thin films grown by thermal evaporation with high resistance to leaching 

      Corrêa, Diogo da Silva; Pazinato, Julia Cristina Oliveira; Freitas, Mauricio Azevedo de; Dorneles, Lucio Strazzabosco; Radtke, Claudio; Garcia, Irene Teresinha Santos (2014) [Artigo de periódico]
      Óxidos de tungstênio apresentam diferentes estequiometrias, estruturas cristalinas e morfologias. Estas características são importantes principalmente quando se deseja utilizá-los como fotocatalisadores. Neste trabalho ...

    • Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and Si 

      Soares, Gabriel Vieira; Baumvol, Israel Jacob Rabin; Corrêa, Silma Alberton; Radtke, Claudio; Stedile, Fernanda Chiarello (2009) [Artigo de periódico]
      Thermally induced incorporation of isotopically labeled water vapor D2 18O species in 7 nm thick SiO2 films thermally grown on 6H-SiC 0001 and on Si 001 were investigated. Higher incorporation of hydrogen and higher isotopic ...