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dc.contributor.authorRadtke, Claudiopt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorRosa, Elisa Brod Oliveira dapt_BR
dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.date.accessioned2016-05-24T02:11:11Zpt_BR
dc.date.issued2008pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141771pt_BR
dc.description.abstractWe investigated oxygen incorporation and exchange during thermal growth of silicon oxide films on silicon carbide. This investigation was carried out in parallel with the thermal growth of silicon oxide films on silicon for comparison.We provide experimental evidence that oxidation by-products of silicon carbide out-diffuse and interact with the silicon oxide overlayer, incorporating C and O. This and other results are in sharp contrast to those obtained for silicon samples, constituting a key issue in the stability of any dielectric material used on silicon carbide.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 92, no. 25 (June 2008), 252909, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectCarbeto de silíciopt_BR
dc.subjectExpansao termicapt_BR
dc.subjectFilmes finospt_BR
dc.subjectFilmes finos dieletricospt_BR
dc.subjectMateriais dielétricospt_BR
dc.titleInteraction of SiC thermal oxidation by-products with SiO2pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000650114pt_BR
dc.type.originEstrangeiropt_BR


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