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dc.contributor.authorDriemeier, Carlos Eduardopt_BR
dc.contributor.authorChambers, James Josephpt_BR
dc.contributor.authorColombo, Luigipt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.date.accessioned2016-05-20T02:10:14Zpt_BR
dc.date.issued2006pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141386pt_BR
dc.description.abstractHfSiO films on Si were sequentially annealed in vacuum, oxygen, hydrogen, or deuterium atmospheres followed by quantification of H and D by nuclear reaction analysis. The observed H D incorporation and desorption behaviors are discussed in terms of two H bonding states in the films. Si–H bonds are easier to break thermally and formation of these bonds can be suppressed by annealing in O2 to fully oxidize Si atoms. O–H bonds are harder to break thermally. However, hydrogen atmospheres ease desorption of H in O–H species. The results indicate possible paths to achieve low H content in HfSiO gate dielectrics.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Vol. 89, no. 5 (July 2006), 051921, 3 p.pt_BR
dc.rightsOpen Accessen
dc.subjectFísicapt_BR
dc.titleThermochemical behavior of hydrogen in hafnium silicate films on Sipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000549780pt_BR
dc.type.originEstrangeiropt_BR


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