Aluminum mobility and interfacial segregation in fully silicided gate contacts

dc.contributor.author	Pezzi, Rafael Peretti	pt_BR
dc.contributor.author	Copel, Matthew	pt_BR
dc.contributor.author	Cabral Junior, C.	pt_BR
dc.contributor.author	Baumvol, Israel Jacob Rabin	pt_BR
dc.date.accessioned	2016-05-19T02:09:30Z	pt_BR
dc.date.issued	2005	pt_BR
dc.identifier.issn	0003-6951	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/141297	pt_BR
dc.description.abstract	The mobility of aluminum implanted as a dopant of fully silicided nickel for advanced metal gates has been investigated following rapid thermal annealing at temperatures ranging from 160 to 700 °C. Resonant nuclear reaction profiling using the 27Al p, 28Si reaction was used for aluminum quantification and depth profiling. The results indicate that there is no significant aluminum loss in the whole annealing temperature interval. Furthermore, aluminum is seen to segregate near the interface with silicon oxide during metal silicidation, forming a stable layer of aluminum oxide.	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Applied physics letters. Vol. 87, no. 16 (Oct. 2005), 162902, 3 p.	pt_BR
dc.rights	Open Access	en
dc.subject	Alumínio	pt_BR
dc.subject	Interdifusao quimica	pt_BR
dc.subject	Semicondutores elementares	pt_BR
dc.subject	Níquel	pt_BR
dc.subject	Recozimento térmico rápido	pt_BR
dc.subject	Silício	pt_BR
dc.title	Aluminum mobility and interfacial segregation in fully silicided gate contacts	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000522913	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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