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Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/

dc.contributor.authorBastos, Karen Pazpt_BR
dc.contributor.authorMorais, Jonderpt_BR
dc.contributor.authorMiotti, Leonardopt_BR
dc.contributor.authorPezzi, Rafael Perettipt_BR
dc.contributor.authorSoares, Gabriel Vieirapt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorHegde, R.I.pt_BR
dc.contributor.authorTseng, Hsing-Huangpt_BR
dc.contributor.authorTobin, Phil J.pt_BR
dc.date.accessioned2016-05-17T02:07:28Zpt_BR
dc.date.issued2002pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/141221pt_BR
dc.description.abstractComposition, atomic transport, and chemical reaction were investigated following annealing in O2 of ultrathin HfO2 films deposited on Si substrates thermally nitrided in NO. The as-prepared thin film composition was established by Rutherford backscattering spectrometry, nuclear reaction analysis, and x-ray photoelectron spectroscopy as a HfO2 film on an intermediate layer containing silicon oxynitride, hafnium silicate, and possibly hafnium–silicon oxynitride. O penetration, incorporation in the bulk of the HfO2 /SiOxNy structure, and oxidation of the substrate forming SiO2 were observed.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. Melville. Vol. 81, no. 9 (Aug. 2002), p. 1669-1671pt_BR
dc.rightsOpen Accessen
dc.subjectRecozimentopt_BR
dc.subjectCompostos de háfniopt_BR
dc.subjectFilmes finos isolantespt_BR
dc.subjectDeposição por MOCVDpt_BR
dc.subjectAnálise química nuclearpt_BR
dc.subjectOxidaçãopt_BR
dc.subjectSistemas de difusão-reaçãopt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectEspectro de fotoeletrons produzidos por raios-xpt_BR
dc.titleOxygen reaction-diffusion in metalorganic chemical vapor deposition HfO/sub 2/ films annealed in O/sub 2/pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000329971pt_BR
dc.type.originEstrangeiropt_BR


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