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dc.contributor.authorSadana, Devendra K.pt_BR
dc.contributor.authorSouza, Joel Pereira dept_BR
dc.contributor.authorCardone, Franckpt_BR
dc.date.accessioned2016-05-10T02:07:02Zpt_BR
dc.date.issued1991pt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/140593pt_BR
dc.description.abstractCarrier concentrations at a level of ?Z 1 X 1019 cm - 3 were achieved when Si-capped GaAs underwent rapid thermal oxidation (RTO) in Ar + 0.1% O2 ambient at 850-1000 ‘C for 10-60 s followed by rapid thermal annealing (RTA) in Ar ambient at 850-950 “C. Carrier concentrations in the RTO only samples were in the range of 2-5 x 1018c m - 3. Kinetic data on the diffusion of Si under RTO and RTO + RTA conditions are presented. The enhancement in the electrical activation of the diffused Si during RTA appears to be partly due to its local atomic rearrangement and partly due to redistribution in the GaAs. Ohmic contacts to the doped layer were made using Au-Ge-Ni alloy and contact resistances of 2 0.1 fi mm were obtained.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofApplied physics letters. New York. Vol. 58, no. 11 (Mar. 1991), p. 1190-1192pt_BR
dc.rightsOpen Accessen
dc.subjectImplantacao de ionspt_BR
dc.titleFormation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenidept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000055684pt_BR
dc.type.originEstrangeiropt_BR


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