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dc.contributor.authorSantos, Jose Henrique Rodrigues dospt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorGrande, Pedro Luispt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorStoll, Rainerpt_BR
dc.contributor.authorKlatt, Christopherpt_BR
dc.contributor.authorKalbitzer, Siegfriedpt_BR
dc.date.accessioned2014-10-07T02:11:24Zpt_BR
dc.date.issued1997pt_BR
dc.identifier.issn0163-1829pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/104222pt_BR
dc.description.abstractWe report measurements of 10B stopping powers in random and Si (100) directions. The measurements were carried out in the 500–9000 keV energy range for the channeling case and in the 300–800 keV for the random one. For the channeling measurements, the low energy data (500–800 keV) follow a vs regime with s50.906 0.06 whereas, for the random data, dE/dxαv5 with s=1.1±0.2. Both results are in good agreement with the prediction of current theories. On the other side, the experimental random 10B stopping power values (for energies up to 650 keV) are in fair agreement with the ones obtained from a scaling procedure by Ziegler, Biersack, and Littmark. However, for energies higher than 650 keV, slight but systematic differences are observed.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review. B, Condensed matter. New York. Vol. 55, no. 20 (May 1997), p. 13651-13657pt_BR
dc.rightsOpen Accessen
dc.subjectFísica da matéria condensadapt_BR
dc.subjectÍonspt_BR
dc.titleElectronic Stopping Power of /Sup 10/B in Si in Random and <100> Channeling Directionspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000194882pt_BR
dc.type.originEstrangeiropt_BR


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