Effect of a finite-range impurity potential on two-dimensional anderson localization

dc.contributor.author	Beal-Monod, M.T.	pt_BR
dc.contributor.author	Theumann, Alba Graciela Rivas de	pt_BR
dc.contributor.author	Forgacs, Gabor	pt_BR
dc.date.accessioned	2014-09-23T02:12:20Z	pt_BR
dc.date.issued	1992	pt_BR
dc.identifier.issn	0163-1829	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/103613	pt_BR
dc.description.abstract	We show that in two-dimensional weakly disordered metais a finite-range impurity-scattering potential reinforces the localization of the electronic states.	en
dc.format.mimetype	application/pdf
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Physical review. B, Condensed matter. New York. Vol. 46, n. 24 (Dec. 1992), p. 15726-15738	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Transformações de fase	pt_BR
dc.title	Effect of a finite-range impurity potential on two-dimensional anderson localization	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000056145	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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