Mostrar registro simples

Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si

dc.contributor.authorKrug, Cristianopt_BR
dc.contributor.authorRosa, Elisa Brod Oliveira dapt_BR
dc.contributor.authorAlmeida, Rita Maria Cunha dept_BR
dc.contributor.authorMorais, Jonderpt_BR
dc.contributor.authorBaumvol, Israel Jacob Rabinpt_BR
dc.contributor.authorSalgado, Tania Denise Miskinispt_BR
dc.contributor.authorStedile, Fernanda Chiarellopt_BR
dc.date.accessioned2014-08-12T02:10:22Zpt_BR
dc.date.issued2000pt_BR
dc.identifier.issn0031-9007pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/100092pt_BR
dc.description.abstractUltrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 °C. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofPhysical review letters. Melville. Vol. 85, no. 19 (Nov. 2000), p. 4120-4123pt_BR
dc.rightsOpen Accessen
dc.subjectFísicapt_BR
dc.subjectFilmes finospt_BR
dc.subjectSilíciopt_BR
dc.subjectTratamento térmicopt_BR
dc.titleAtomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Sipt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000279172pt_BR
dc.type.originEstrangeiropt_BR


Thumbnail
Nome:
000279172.pdf
Tamanho:
136.3Kb
Formato:
PDF
Descrição:
Texto completo (inglês)
Visualizar/abrir
   

Este item está licenciado na Creative Commons License

Mostrar registro simples