Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si
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Date
2000Author
Type
Abstract
Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 °C. Under vacuum annealing all species remained essentially imm ...
Ultrathin films of Al₂O₃ deposited on Si were submitted to rapid thermal annealing in vacuum or in oxygen atmosphere, in the temperature range from 600 to 800 °C. Nuclear reaction profiling with subnanometric depth resolution evidenced mobility of O, Al, and Si species, and angle-resolved x-ray photoelectron spectroscopy revealed the formation of Si-Al-O compounds in near-surface regions, under oxidizing atmosphere at and above 700 °C. Under vacuum annealing all species remained essentially immobile. A model is presented based on diffusion-reaction equations capable of explaining the mobilities and reproducing the obtained profiles. ...
In
Physical review letters. Melville. Vol. 85, no. 19 (Nov. 2000), p. 4120-4123
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Foreign
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