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dc.contributor.authorSias, Uilson Schwantzpt_BR
dc.contributor.authorAmaral, Liviopt_BR
dc.contributor.authorBehar, Monipt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorMoreira, Eduardo Cerettapt_BR
dc.contributor.authorRibeiro, Euripedespt_BR
dc.date.accessioned2014-06-06T02:06:22Zpt_BR
dc.date.issued2005pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/96096pt_BR
dc.description.abstractIn this work we present a study of photoluminescence PL on Si nanocrystals NC produced by ion implantation on SiO2 targets at temperatures ranging between room temperature and 800 °C and subsequently annealed in N2 atmosphere. The PL measurements were performed at low excitation power density (20 mW/cm²) in order to avoid nonlinear effects. Broad PL spectra were obtained, presenting a line-shape structure that can be reproduced by two superimposed peaks at around 780 and 950 nm. We have observed that both PL intensity and line-shape change by varying the annealing as well as the implantation temperatures. Implantations performed at 400 °C or higher produce a remarkable effect in the PL line shape, evidenced by a strong redshift, and a striking intensity increase of the peak located at the long-wavelength side of the PL spectrum. In addition we have studied the PL dependence on the excitation power density (from 0.002 to 15 W/cm²) . The samples with broad NC size distribution containing large grains, as revealed by transmission electron microscopy observations presented a PL spectrum whose line shape was strongly dependent on the excitation power density. While high excitation power densities (saturation regime) induce only the short-wavelength part of the PL spectrum, low excitation power densities bring out the appearance of the hidden long-wavelength part of the emission. The present results are explained by current models.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Vol. 98, no. 3 (Aug. 2005), 034312 6p.pt_BR
dc.rightsOpen Accessen
dc.subjectSemicondutores elementarespt_BR
dc.subjectFotoluminescênciapt_BR
dc.subjectSilíciopt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.titlePhotoluminescence behavior of Si nanocrystals as a function of the implantation temperature and excitation power densitypt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000535692pt_BR
dc.type.originEstrangeiropt_BR


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