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dc.contributor.authorDalponte, Mateuspt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorGoncharova, L.V.pt_BR
dc.contributor.authorStarodub, D.pt_BR
dc.contributor.authorGarfunkel, E.pt_BR
dc.contributor.authorGustafsson, T.pt_BR
dc.date.accessioned2014-06-05T01:59:11Zpt_BR
dc.date.issued2004pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/96014pt_BR
dc.description.abstractWe have studied arsenic (As) diffusion and its electrical activation in two different types of silicon substrates: bulk Si and separation by implanted oxygen (SIMOX) wafers. Both substrates were implanted with a dose of 531014 cm-² As+ at 20 keV. The samples were annealed and physical characterization was performed with secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry, and medium energy ion scattering. The electrical properties of the film were extracted by Hall measurements. The SIMS results showed a lower dopant outdiffusion loss to the atmosphere during annealing in the SIMOX samples. The electrical results for the SIMOX samples were also superior to those of bulk Si due to the higher dopant retention, likely the result of a higher concentration of vacancies, which in turn increases the relative fraction of As which is activated (in substitutional sites). The net effect was a higher sheet carrier concentration and lower sheet resistance in the SIMOX samples. The implantation damage removal was superior in SIMOX samples compared to bulk Si ones.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Woodbury. Vol. 96, no. 12 (Dec. 2004), p. 7388-7391pt_BR
dc.rightsOpen Accessen
dc.subjectSemicondutores elementarespt_BR
dc.subjectImplantação de íonspt_BR
dc.subjectEstruturas mispt_BR
dc.subjectRetroespalhamento rutherfordpt_BR
dc.subjectFilmes finospt_BR
dc.subjectCompostos de silíciopt_BR
dc.subjectSIMOXpt_BR
dc.titleThermal activation of As implanted in bulk Si and separation by implanted oxygenpt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000503771pt_BR
dc.type.originEstrangeiropt_BR


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