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dc.contributor.authorSias, Uilson Schwantzpt_BR
dc.contributor.authorMoreira, Eduardo Cerettapt_BR
dc.contributor.authorRibeiro, Euripedespt_BR
dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorAmaral, Liviopt_BR
dc.contributor.authorBehar, Monipt_BR
dc.date.accessioned2014-05-31T02:06:48Zpt_BR
dc.date.issued2004pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95835pt_BR
dc.description.abstractA systematic study of photoluminescence (PL) behavior of Si nanocrystals in SiO2 obtained by ion implantation in a large range of temperatures (-2200 up to 800°C), and subsequent furnace annealing in N2 ambient was performed. A PL signal in the wavelength range 650–1000 nm was observed. The PL peak wavelength and intensity are dependent on the fluence, implantation and annealing temperatures. It was found that after annealing at 1100°C, both implantations of 1.5x1017 Si/cm² at room temperature or 0.5x1017 Si/cm² at 400°C result in the same PL peak intensity. By varying the implantation temperature we can achieve the same PL efficiency with lower fluences showing that hot implantations play an important role for initial formation of the nanocrystals. The PL intensity evolution as a function of the annealing time was also studied. As the implantation temperature was increased, larger mean size Si nanocrystals were observed by means of dark-field transmission electron microscopy analysis.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Vol. 95, no. 9 (May 2004), p. 5053-5059pt_BR
dc.rightsOpen Accessen
dc.subjectSemicondutores elementarespt_BR
dc.subjectImplantacao ionicapt_BR
dc.subjectNanopartículaspt_BR
dc.subjectFotoluminescênciapt_BR
dc.subjectSilíciopt_BR
dc.subjectCompostos de silíciopt_BR
dc.subjectMicroscopia eletrônica de transmissãopt_BR
dc.titlePhotoluminescence from Si nanocrystals induced by high-temperature implantation in SiO/sub 2/pt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000414478pt_BR
dc.type.originEstrangeiropt_BR


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