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dc.contributor.authorKögler, R.pt_BR
dc.contributor.authorPeeva, Anitapt_BR
dc.contributor.authorLebedev, Andreipt_BR
dc.contributor.authorPosselt, Matthiaspt_BR
dc.contributor.authorSkorupa, Wolfgangpt_BR
dc.contributor.authorÖzelt, G.pt_BR
dc.contributor.authorHutter, Herbertpt_BR
dc.contributor.authorBehar, Monipt_BR
dc.date.accessioned2014-05-31T02:06:44Zpt_BR
dc.date.issued2003pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95827pt_BR
dc.description.abstractThe strong gettering of Cu atoms in single-crystal Si implanted with 3.5 MeV P+ ions is studied after thermal treatment and Cu contamination. Cu decorates the remaining implantation damage. Three separate Cu gettering layers are detected by secondary ion mass spectrometry: at the main projected ion range RP below RP (RP/2 effect) and beyond RP (trans-RP effect). The defects acting as gettering centers at RP/2 and RP are implantation induced excess vacancies and excess interstitials, respectively. Cu profiles fit very well with depth distributions of excess vacancies and excess interstitials determined by binary collision simulations for random and channeled ion incidence. The RP/2 effect for P+ implantation is found to be significantly reduced in comparison with Si+ implantation. It disappears completely for higher P+ ion fluences. The trans-RP gettering layer is formed by thermal treatment. The Cu accumulation in the trans-RP region increases with increasing temperature and/or with increasing annealing time. These results are in qualitative agreement with the assumption that interstitials carried by P diffusion are the origin of Cu gettering in the trans-RP region. The P diffusion may inject interstitials into the bulk and also into the RP/2 region thus decreasing the RP/2 effect.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Melville. Vol. 94, no. 6 (Sept. 2003), p. 3834-3839pt_BR
dc.rightsOpen Accessen
dc.subjectCobrept_BR
dc.subjectSemicondutores elementarespt_BR
dc.subjectIntersticiaispt_BR
dc.subjectImplantacao ionicapt_BR
dc.subjectFósforopt_BR
dc.subjectEspectros de massa por íons secundáriospt_BR
dc.subjectSilíciopt_BR
dc.subjectVacancias cristalpt_BR
dc.titleCu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion rangept_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000397266pt_BR
dc.type.originEstrangeiropt_BR


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