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Characterization of deep level traps responsible for isolation of proton implanted GaAs

dc.contributor.authorBoudinov, Henri Ivanovpt_BR
dc.contributor.authorCoelho, Artur Vicente Pfeiferpt_BR
dc.contributor.authorTan, Hoe H.pt_BR
dc.contributor.authorJagadish, Chenupatipt_BR
dc.date.accessioned2014-05-31T02:06:43Zpt_BR
dc.date.issued2003pt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/95823pt_BR
dc.description.abstractDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250°C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.en
dc.format.mimetypeapplication/pdfpt_BR
dc.language.isoengpt_BR
dc.relation.ispartofJournal of applied physics. Melville. Vol. 93, no. 6 (Mar. 2003), p. 3234-3238pt_BR
dc.rightsOpen Accessen
dc.subjectNíveis profundospt_BR
dc.subjectSemicondutores iii-vpt_BR
dc.subjectImplantacao ionicapt_BR
dc.subjectEstabilidade térmicapt_BR
dc.titleCharacterization of deep level traps responsible for isolation of proton implanted GaAspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000357067pt_BR
dc.type.originEstrangeiropt_BR


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