Electrical resistivity of bismuth implanted into silicon

dc.contributor.author	Silva, Antonio Ferreira da	pt_BR
dc.contributor.author	Sernelius, Bo E.	pt_BR
dc.contributor.author	Souza, Joel Pereira de	pt_BR
dc.contributor.author	Boudinov, Henri Ivanov	pt_BR
dc.date.accessioned	2014-05-17T02:07:06Z	pt_BR
dc.date.issued	1996	pt_BR
dc.identifier.issn	0021-8979	pt_BR
dc.identifier.uri	http://hdl.handle.net/10183/95365	pt_BR
dc.description.abstract	We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., p(Sb)<P(p)<p(As)<p(Bi).	en
dc.format.mimetype	application/pdf	pt_BR
dc.language.iso	eng	pt_BR
dc.relation.ispartof	Journal of Applied Physics. Woodbury. Vol. 79, n. 7 (Apr. 1996), p. 3453-3455	pt_BR
dc.rights	Open Access	en
dc.subject	Física da matéria condensada	pt_BR
dc.subject	Condutividade elétrica	pt_BR
dc.subject	Implantação de íons	pt_BR
dc.subject	Impurezas	pt_BR
dc.subject	Dopagem de semicondutores	pt_BR
dc.title	Electrical resistivity of bismuth implanted into silicon	pt_BR
dc.type	Artigo de periódico	pt_BR
dc.identifier.nrb	000140522	pt_BR
dc.type.origin	Estrangeiro	pt_BR

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