Structure and composition of amorphous Ge1-xSnx thin films
dc.contributor.author | Chambouleyron, I. | pt_BR |
dc.contributor.author | Souza, Joel Pereira de | pt_BR |
dc.contributor.author | Baumvol, Israel Jacob Rabin | pt_BR |
dc.contributor.author | Marques, F.C. | pt_BR |
dc.date.accessioned | 2014-05-13T02:03:41Z | pt_BR |
dc.date.issued | 1988 | pt_BR |
dc.identifier.issn | 0021-8979 | pt_BR |
dc.identifier.uri | http://hdl.handle.net/10183/95121 | pt_BR |
dc.description.abstract | The composition and bonding configuration of amorphous germanium-tin (a-Gel 1--xSnx ) thin films are reported (O≤x < 0.3). Mössbauer spectroscopy analyses show that under the reported deposition conditions all tin atoms enter the a-Ge network in a perfect substitutional way, i.e., in a covalent tetrahedral configuration. The absence of defect structures in the tin sites is discussed and compared with results on films prepared under different conditions. | en |
dc.format.mimetype | application/pdf | pt_BR |
dc.language.iso | eng | pt_BR |
dc.relation.ispartof | Journal of Applied Physics. Woodbury. Vol. 63, no. 11 (June, 1988), p. 5596-5598 | pt_BR |
dc.rights | Open Access | en |
dc.subject | Efeito mossbauer | pt_BR |
dc.subject | Semicondutores amorfos | pt_BR |
dc.subject | Filmes finos | pt_BR |
dc.subject | Implantação de íons | pt_BR |
dc.title | Structure and composition of amorphous Ge1-xSnx thin films | pt_BR |
dc.type | Artigo de periódico | pt_BR |
dc.identifier.nrb | 000014877 | pt_BR |
dc.type.origin | Estrangeiro | pt_BR |
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