Thermal behavior and range distribution of 209bi implanted the into ai/v bilayer structure
Fecha
1988Autor
Materia
Abstract
350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer an ...
350-keV 209Bi + was implanted into an A1 (1000 Å)/V bilayer system. The Bi depth distribution measured by Rutherford backscattering agrees well with predictions obtained via the Monte-Carlo simulation method (TRIM code). Diffusion coefficients for Bi in both the V substrate of the AI/V system and the pure V foil are extracted after thermal annealings in a temperature range between 200 and 700 °c. The results show that the Ri ions follow a hindered diffusion at the Al film of the AI/V bilayer and for temperatures higher than 580 °C diffuse regularly in the V bulk. ...
En
Journal of applied physics. Woodbury. Vol. 63, no. 9 (May 1988), p. 4431-4434
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