SiO2 films on 4H-SiC : reducing interface electrical degradation due to thermal oxidation
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Date
2013Author
In
Brazilian-German Workshop on Applied Surface Science (8. : 2013 Sept. 15-20 : Bamberg, Alemanha). Book of Abstracts. [S.l. : s.n., 2013]
Source
Foreign
Collections
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Exact and Earth Sciences (5165)
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