Navegação Produção Científica por Assunto "Oxidação"
Resultados 1-20 de 36
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Aerobic, catalytic oxidation of alcohols in ionic liquids
(2006) [Artigo de periódico]Um sistema catalítico simples e eficiente, baseado em RuCl3 imobilizado em líquidos iônicos, foi desenvolvido para oxidar álcoois a aldeídos e cetonas sob condições brandas. Um novo líquido iônico fluorado, pentadecafluo ... -
Atomic transport across the interfaces during the formation of ultrathin silicon oxide/nitride/oxide films
(1998) [Artigo de periódico]The redistribution of O and N during the final, thermal oxidation in dry O2 step in the formation of ultrathin silicon oxide/nitride/oxide dielectric films ~ONO! was investigated using isotopic tracing and depth profiling ... -
Carbon oxidation generated in diesel engines using iron-doped fuel
(2012) [Artigo de periódico]The soot oxidation activity of metallic iron nanoparticles was studied under real diesel engine conditions. Particulate matter (PM) was sampled at distinct temperatures, using fuels containing ferrocene. The results indicated ... -
Carbon supported Pd–Cu nanoalloys : support and valence band structure influence on reduction and oxidation reactions
(2021) [Artigo de periódico]The present study has tracked the changes in the electronic and structural properties of Pd–Cu nanoalloys that were influenced by the composition and chosen support. Carbon supported Pd–Cu nanoalloys (PdxCu1−x/C for x = ... -
Comment on "Atomic transport and chemical stability during annealing of ultrathin Al/sub 2/O/sub 3/ films on Si" : reply
(2001) [Artigo de periódico] -
Comparison of nitrogen incorporation in SiO/sub 2//SiC and SiO/sub 2/Si structures
(2000) [Artigo de periódico]The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 ... -
Dynamics of thermal growth of silicon oxide films on Si
(2000) [Artigo de periódico]Thermal growth of silicon oxide films on Si in dry O₂ is modeled as a dynamical system, assuming that it is basically a reaction-diffusion phenomenon. Relevant findings of the last decade are incorporated, as structure and ... -
Effect of the shot peening process on the corrosion and oxidation resistance of AISI430 stainless steel
(2015) [Artigo de periódico]Ferritic stainless steels are used in specific applications where corrosion resistance, oxidation resistance and a high mechanical resistance are required. Shot peening is a process applied to add residual compression ... -
Effects of ion irradiation in the thermal oxidation of SIC
(2002) [Artigo de periódico]We investigated the thermal growth of SiO₂ films on 6H-SiC (0001) samples irradiated with 170 keV Ar⁺ ions. Electronic, compositional, and structural features arisen from the irradiation process were accessed. All results ... -
Evaluation of direct photolysis, electrooxidation and photoelectrooxidation for rhodamine-b degradation
(2018) [Artigo de periódico]The focus of this study is to evaluate the efficiency of oxidation processes in the treatment of a solution containing Rhodamine-B (RhB) used in various industrial applications. The advanced oxidation processes of ... -
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100)
(1999) [Artigo de periódico]Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ;3.5 nm Al2O3 films deposited by low temperature ~,400 °C! chemical vapor deposition on Si~100!. Narrow nuclear resonance and Auger depth ... -
Few layer reduced graphene oxide : evaluation of the best experimental conditions for easy production
(2017) [Artigo de periódico]This work aimed to produce graphene oxide with few graphene layers, a low number of defects, good conductivity and reasonable amount of oxygen, adequate for use as filler in polymeric composites. Two starting materials ... -
Gemini-Phoenix infrared high-resolution abundance analysis of five giants in the bulge globular cluster NGC 6553
(2003) [Artigo de periódico]A detailed abundance analysis of 5 giants of the metal-rich bulge globular cluster NGC 6553 was carried out using high resolution infrared spectra in the H band, obtained at the Gemini-South 8m telescope. JK photometry ... -
Heterogeneous photocatalytic degradation of dyes in water/alcohol solution used by the brazilian agate industry
(2019) [Artigo de periódico]The agate dyeing industry has been commonly seen as a high-pollution industry. Dyeing wastewater treatment is considered one of the most important categories for water-pollution control, because of its intense colour and ... -
Improvement of SiO2/4H-SiC interface properties by oxidation using hydrogen peroxide
(2009) [Artigo de periódico]The effect of using H2O2 in the thermal growth process of dielectric films on n-type 4H-SiC substrates has been investigated. In comparison to conventional oxide growth using H2O, we found that the interface trap density ... -
Influencia da oxidacao nas propriedades plasticas de carvoes coqueificantes
(1992) [Resumo publicado em evento] -
Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies
(2001) [Artigo de periódico]Initial stages of oxidation of single-crystal, Si-faced silicon carbide were investigated using ion scattering and angle-resolved x-ray photoelectron spectroscopies. The very first oxidation products are shown to be silicon ... -
Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon
(1999) [Artigo de periódico]Nitrogen was deposited on the surface of Si~100! wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 1031014 cm22. The samples were thermally oxidized in dry O2 at temperatures ... -
Isotopic substitution of si during thermal growth of ultrathin silicon-oxide films on si(111) in o/sub 2/
(1999) [Artigo de periódico]The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29Si on ... -
Limiting step involved in the thermal growth of silicon oxide films on silicon carbide
(2002) [Artigo de periódico]Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the ...