Mostrar registro simples

Statistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETs

dc.contributor.authorWirth, Gilson Inaciopt_BR
dc.contributor.authorSilva, Roberto dapt_BR
dc.contributor.authorBrederlow, Ralfpt_BR
dc.date.accessioned2011-01-28T05:59:10Zpt_BR
dc.date.issued2007pt_BR
dc.identifier.issn0018-9383pt_BR
dc.identifier.urihttp://hdl.handle.net/10183/27583pt_BR
dc.description.abstractThis paper covers measurement, analytical analysis, and Monte Carlo simulation of the frequency and bandwidth dependence of MOSFET low-frequency (LF) noise behavior. The model is based on microscopic device physics parameters, which cause statistical variation in the LF noise behavior of individual devices. Analytical equations for the statistical parameters are provided. The analytical model is compared to experimental data and Monte Carlo simulation results.en
dc.format.mimetypeapplication/pdf
dc.language.isoengpt_BR
dc.relation.ispartofIEEE transactions on electron devices. New York, NY. vol. 54, no. 2 (Feb. 2007), p. 340-345pt_BR
dc.rightsOpen Accessen
dc.subjectMicroeletrônicapt_BR
dc.subjectAnalog circuitsen
dc.subjectLow-frequency (LF) noiseen
dc.subjectCircuitos analógicospt_BR
dc.subjectMOS transistorsen
dc.subjectEngenharia elétricapt_BR
dc.subjectSimulação computacionalpt_BR
dc.subjectNoise modelingen
dc.subjectRF circuitsen
dc.subjectMosfetpt_BR
dc.subjectVariabilityen
dc.titleStatistical model for the circuit bandwidth dependence of low-frequency noise in deep-submicrometer MOSFETspt_BR
dc.typeArtigo de periódicopt_BR
dc.identifier.nrb000581798pt_BR
dc.type.originEstrangeiropt_BR


Thumbnail
Nome:
000581798.pdf
Tamanho:
196.7Kb
Formato:
PDF
Descrição:
Texto completo (inglês)
Visualizar/abrir
   

Este item está licenciado na Creative Commons License

Mostrar registro simples